Strain-compensated GaInAs/AlInAs/InP quantum cascade laser materials
Identifieur interne : 003886 ( Main/Repository ); précédent : 003885; suivant : 003887Strain-compensated GaInAs/AlInAs/InP quantum cascade laser materials
Auteurs : RBID : Pascal:10-0259207Descripteurs français
- Pascal (Inist)
- Semiconducteur III-V, Composé III-V, Laser cascade quantique, Laser semiconducteur, Puits quantique multiple, Effet contrainte, Méthode MOVPE, Diffraction RX, Microscopie force atomique, Frange interférence, Mécanisme croissance, Puits quantique, Nanomatériau, Phonon, Phosphure d'indium, Dopage, Epitaxie phase vapeur, Hétérojonction, GaInAs, InP, 8115K, 8110A, 8107.
- Wicri :
- concept : Dopage.
English descriptors
- KwdEn :
- Atomic force microscopy, Doping, Growth mechanism, Heterojunctions, III-V compound, III-V semiconductors, Indium phosphide, Interference fringe, MOVPE method, Multiple quantum well, Nanostructured materials, Phonons, Quantum cascade laser, Quantum wells, Semiconductor lasers, Stress effects, VPE, XRD.
Abstract
Strain-compensated (SC) GalnAs/AlInAs/InP multiple-quantum-well structures and quantum cascade lasers (QCLs) with strain levels of 1% and as high as 1.5% were grown by organometallic vapor phase epitaxy (OMVPE). The structures were characterized by high-resolution X-ray (HRXRD) diffraction and atomic force microscopy (AFM), and narrow-ridge QCL devices were fabricated. HRXRD and AFM results indicate very high quality materials with narrow satellite peaks, well-defined interference fringes, and a step-flow growth mode for 1% SC materials. A marginal broadening of satellite peaks is measured for 1.5% SC structures, but step-flow growth is maintained. QCLs based on a conventional four-quantum-well double-phonon resonant active region design with nominal 1% SC were grown with doping concentration varied from 1 to 4 × 1017 cm-3 in the active region. The performance of ridge lasers under pulsed conditions is comparable to state-of-the-art results for 4.8 μm devices. QCLs with a novel injectorless four-quantum well QCL design and 1.5% SC operated in pulsed mode at room temperature at 5.5 μm.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Strain-compensated GaInAs/AlInAs/InP quantum cascade laser materials</title><author><name sortKey="Wang, Christine A" uniqKey="Wang C">Christine A. Wang</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street</s1><s2>Lexington, MA 02420-9108</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Lexington, MA 02420-9108</wicri:noRegion></affiliation></author><author><name sortKey="Goyal, Anish" uniqKey="Goyal A">Anish Goyal</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street</s1><s2>Lexington, MA 02420-9108</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Lexington, MA 02420-9108</wicri:noRegion></affiliation></author><author><name>ROBIN HUANG</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street</s1><s2>Lexington, MA 02420-9108</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Lexington, MA 02420-9108</wicri:noRegion></affiliation></author><author><name sortKey="Donnelly, Joseph" uniqKey="Donnelly J">Joseph Donnelly</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street</s1><s2>Lexington, MA 02420-9108</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Lexington, MA 02420-9108</wicri:noRegion></affiliation></author><author><name sortKey="Calawa, Daniel" uniqKey="Calawa D">Daniel Calawa</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street</s1><s2>Lexington, MA 02420-9108</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Lexington, MA 02420-9108</wicri:noRegion></affiliation></author><author><name sortKey="Turner, George" uniqKey="Turner G">George Turner</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street</s1><s2>Lexington, MA 02420-9108</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Lexington, MA 02420-9108</wicri:noRegion></affiliation></author><author><name sortKey="Sanchez Rubio, Antonio" uniqKey="Sanchez Rubio A">Antonio Sanchez-Rubio</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street</s1><s2>Lexington, MA 02420-9108</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Lexington, MA 02420-9108</wicri:noRegion></affiliation></author><author><name sortKey="Hsu, Allen" uniqKey="Hsu A">Allen Hsu</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Research Laboratory of Electronics, Massachusetts Institute of Technology</s1><s2>Cambridge, MA 02139</s2><s3>USA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Cambridge (Massachusetts)</settlement><region type="state">Massachusetts</region></placeName><orgName type="university">Massachusetts Institute of Technology</orgName></affiliation></author><author><name>QING HU</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Research Laboratory of Electronics, Massachusetts Institute of Technology</s1><s2>Cambridge, MA 02139</s2><s3>USA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><settlement type="city">Cambridge (Massachusetts)</settlement><region type="state">Massachusetts</region></placeName><orgName type="university">Massachusetts Institute of Technology</orgName></affiliation></author><author><name sortKey="Williams, B" uniqKey="Williams B">B. Williams</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>University of California</s1><s2>Los Angeles, CA 90095</s2><s3>USA</s3><sZ>10 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>University of California</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">10-0259207</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 10-0259207 INIST</idno><idno type="RBID">Pascal:10-0259207</idno><idno type="wicri:Area/Main/Corpus">004490</idno><idno type="wicri:Area/Main/Repository">003886</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Doping</term><term>Growth mechanism</term><term>Heterojunctions</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium phosphide</term><term>Interference fringe</term><term>MOVPE method</term><term>Multiple quantum well</term><term>Nanostructured materials</term><term>Phonons</term><term>Quantum cascade laser</term><term>Quantum wells</term><term>Semiconductor lasers</term><term>Stress effects</term><term>VPE</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Laser cascade quantique</term><term>Laser semiconducteur</term><term>Puits quantique multiple</term><term>Effet contrainte</term><term>Méthode MOVPE</term><term>Diffraction RX</term><term>Microscopie force atomique</term><term>Frange interférence</term><term>Mécanisme croissance</term><term>Puits quantique</term><term>Nanomatériau</term><term>Phonon</term><term>Phosphure d'indium</term><term>Dopage</term><term>Epitaxie phase vapeur</term><term>Hétérojonction</term><term>GaInAs</term><term>InP</term><term>8115K</term><term>8110A</term><term>8107</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Dopage</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Strain-compensated (SC) GalnAs/AlInAs/InP multiple-quantum-well structures and quantum cascade lasers (QCLs) with strain levels of 1% and as high as 1.5% were grown by organometallic vapor phase epitaxy (OMVPE). The structures were characterized by high-resolution X-ray (HRXRD) diffraction and atomic force microscopy (AFM), and narrow-ridge QCL devices were fabricated. HRXRD and AFM results indicate very high quality materials with narrow satellite peaks, well-defined interference fringes, and a step-flow growth mode for 1% SC materials. A marginal broadening of satellite peaks is measured for 1.5% SC structures, but step-flow growth is maintained. QCLs based on a conventional four-quantum-well double-phonon resonant active region design with nominal 1% SC were grown with doping concentration varied from 1 to 4 × 10<sup>17</sup> cm<sup>-3</sup> in the active region. The performance of ridge lasers under pulsed conditions is comparable to state-of-the-art results for 4.8 μm devices. QCLs with a novel injectorless four-quantum well QCL design and 1.5% SC operated in pulsed mode at room temperature at 5.5 μm.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>312</s2></fA05><fA06><s2>8</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Strain-compensated GaInAs/AlInAs/InP quantum cascade laser materials</s1></fA08><fA11 i1="01" i2="1"><s1>WANG (Christine A.)</s1></fA11><fA11 i1="02" i2="1"><s1>GOYAL (Anish)</s1></fA11><fA11 i1="03" i2="1"><s1>ROBIN HUANG</s1></fA11><fA11 i1="04" i2="1"><s1>DONNELLY (Joseph)</s1></fA11><fA11 i1="05" i2="1"><s1>CALAWA (Daniel)</s1></fA11><fA11 i1="06" i2="1"><s1>TURNER (George)</s1></fA11><fA11 i1="07" i2="1"><s1>SANCHEZ-RUBIO (Antonio)</s1></fA11><fA11 i1="08" i2="1"><s1>HSU (Allen)</s1></fA11><fA11 i1="09" i2="1"><s1>QING HU</s1></fA11><fA11 i1="10" i2="1"><s1>WILLIAMS (B.)</s1></fA11><fA14 i1="01"><s1>Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street</s1><s2>Lexington, MA 02420-9108</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Research Laboratory of Electronics, Massachusetts Institute of Technology</s1><s2>Cambridge, MA 02139</s2><s3>USA</s3><sZ>8 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="03"><s1>University of California</s1><s2>Los Angeles, CA 90095</s2><s3>USA</s3><sZ>10 aut.</sZ></fA14><fA20><s1>1157-1164</s1></fA20><fA21><s1>2010</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000181745330230</s5></fA43><fA44><s0>0000</s0><s1>© 2010 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>32 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>10-0259207</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Strain-compensated (SC) GalnAs/AlInAs/InP multiple-quantum-well structures and quantum cascade lasers (QCLs) with strain levels of 1% and as high as 1.5% were grown by organometallic vapor phase epitaxy (OMVPE). The structures were characterized by high-resolution X-ray (HRXRD) diffraction and atomic force microscopy (AFM), and narrow-ridge QCL devices were fabricated. HRXRD and AFM results indicate very high quality materials with narrow satellite peaks, well-defined interference fringes, and a step-flow growth mode for 1% SC materials. A marginal broadening of satellite peaks is measured for 1.5% SC structures, but step-flow growth is maintained. QCLs based on a conventional four-quantum-well double-phonon resonant active region design with nominal 1% SC were grown with doping concentration varied from 1 to 4 × 10<sup>17</sup> cm<sup>-3</sup> in the active region. The performance of ridge lasers under pulsed conditions is comparable to state-of-the-art results for 4.8 μm devices. QCLs with a novel injectorless four-quantum well QCL design and 1.5% SC operated in pulsed mode at room temperature at 5.5 μm.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A10A</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A07Z</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>III-V compound</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Laser cascade quantique</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Quantum cascade laser</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Puits quantique multiple</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Multiple quantum well</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Pozo cuántico múltiple</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Effet contrainte</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Stress effects</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Méthode MOVPE</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>MOVPE method</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Método MOVPE</s0><s5>07</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>XRD</s0><s5>08</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Microscopie force atomique</s0><s5>09</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Atomic force microscopy</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Frange interférence</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Interference fringe</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Franja interferencia</s0><s5>10</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Mécanisme croissance</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Growth mechanism</s0><s5>11</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Mecanismo crecimiento</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Puits quantique</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Quantum wells</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Nanomatériau</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Nanostructured materials</s0><s5>13</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Phonon</s0><s5>14</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Phonons</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>15</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Dopage</s0><s5>29</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Doping</s0><s5>29</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Doping</s0><s5>29</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0><s5>30</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>VPE</s0><s5>30</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Hétérojonction</s0><s5>31</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Heterojunctions</s0><s5>31</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>GaInAs</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>8115K</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>8110A</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>8107</s0><s4>INC</s4><s5>73</s5></fC03><fN21><s1>172</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>American Conference on Crystal Growth and Epitaxy</s1><s2>17</s2><s3>Lake Geneva, Wisconsin USA</s3><s4>2009-08-09</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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